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Samsung Reveals 1Gb Mobile DRAM
By: Sharon Khare   |   Dec 27,2006
Samsung Electronics has announced that it has developed the industry's first one gigabit (Gb) Mobile DRAM (dynamic random access memory) for mobile products, using 80nm process technology.

Samsung claims that the new chip, also known as low-power DDR (double data rate) or synchronous DRAM, will be more cost effective than other high density mobile solutions and used for a wide range of advanced handset applications as well as for digital still cameras, portable media players and portable gaming products.

The new 1Gb Mobile DRAM chip uses the same packaging technique as the 512Mb double-die stack 1Gb package, however it introduces a new temperature-sensing feature. This new temperature-compensated, self-refresh feature maximizes the self-refresh cycle to reduce power drain in standby mode by 30 percent over conventional memory chip designs.

Offering a more compact form factor, the new 1Gb Mobile DRAM chip is at least 20 percent thinner than a multi-stack package of 512Mb dies, allowing a single high-density package solution of 1.5Gb or even 2Gb Mobile DRAM memory, One 1Gb mobile DRAM also can be combined with Flash memory in multi-chip packaging including package-on-package designs.

Samsung plans to mass produce the new device beginning in the second quarter of 2007.
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